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notes through are on page 11 www.irf.com 1 09/22/10 hexfet power mosfet high frequency dc-dc converters plasma display panel benefits applications low gate-to-drain charge to reduce\ switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current lead-free

d 2 pak irfs52n15dpbf to-220ab irfb52n15dpbf to-262 irfsl52n15dpbf * r jc (end of life) for d 2 pak and to-262 = 0.65c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wearout of the die attach medium. thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.47* r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient ??? 40 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 51* i d @ t c = 100c continuous drain current, v gs @ 10v 36* a i dm pulsed drain current 240 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 230* linear derating factor 1.5* w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 5.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings v ds 150 v v ds (avalanche) min. 200 v r ds(on) max @ 10v 32 m t j max 175 c key parameters pd - 97002a
2 www.irf.com irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf parameter min. typ. max. units conditions g fs forward transconductance 19 ??? ??? s v ds = 50v, i d = 36a q g total gate charge ??? 60 89 i d = 36a q gs gate-to-source charge ??? 18 27 nc v ds = 75v q gd gate-to-drain ("miller") charge ??? 28 42 v gs = 10v, t d(on) turn-on delay time ??? 16 ??? v dd = 75v t r rise time ??? 47 ??? i d = 36a t d(off) turn-off delay time ??? 28 ??? r g = 2.5 ? t f fall time ??? 25 ??? v gs = 10v c iss input capacitance ??? 2770 ??? v gs = 0v c oss output capacitance ??? 590 ??? v ds = 25v c rss reverse transfer capacitance ??? 110 ??? pf ? = 1.0mhz c oss output capacitance ??? 3940 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 260 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 550 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 36a, v gs = 0v t rr reverse recovery time ??? 140 210 ns t j = 25c, i f = 36a q rr reverse recoverycharge ??? 780 1170 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 60 240 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.16 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 32 m ? v gs = 10v, i d = 36a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj v ds (avalanche) repetitive avalanche voltage v 200 ??? ??? 36 ??? ??? 450 ??? ??? max. 470 min. typ. ??? ???
www.irf.com 3 irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 60a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 300s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 300s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 300s pulse width
4 www.irf.com irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 10203040506070 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v i d = 36a
www.irf.com 5 irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 180 360 540 720 900 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 15a 26a 36a
www.irf.com 7 irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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8 www.irf.com irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf

note: "p" inass embly line position i ndi cates "l ead - f ree" line c week 19 part number dat e code ye ar 7 = 1997 as s e mble d on ww 19, 1997 t his is an irf1010 example: in t he as semb ly line "c" lot code 1789 int ernat ional assembly lot code rect ifier logo to-220 package is not recommended for surface mount application. notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
www.irf.com 9 irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf

dat e code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = de s i gnat e s l e ad - f r e e product (optional) f530s in the assembly line "l" as semb led on ww 02, 2000 t his is an irf 530s wit h lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number dat e code line l week 02 or f 530s logo assembly lot code

notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
10 www.irf.com irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf to-262 part marking information to-262 package outline
logo rectifier int ernat ional lot code as s e mb l y logo rectifier international dat e code we e k 1 9 ye ar 7 = 1997 part number a = as s e mb l y s i t e cod e or product (optional) p = de s i gn at e s l e ad - f r e e e xample : t his is an irl3103l lot code 1789 as s e mb l y part numbe r dat e code we e k 1 9 line c lot code ye ar 7 = 1997 as s embled on ww 19, 1997 in the assembly line "c" igbt 1- gate notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
www.irf.com 11 irfb52n15dpbf/irfs52n15dpbf/irfsl52n15dpbf 1% duty cycle, 100 pulses, limited by max. junction temperature. starting t j = 25c, l = 0.72mh r g = 25 ? , i as = 36a. i sd 36a, di/dt 400a/s, v dd v (br)dss , t j 175c. pulse width 300s; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . this is only applied to to-220ab package. this is applied to d 2 pak, when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2010

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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